Name: BRZHIFI Infineon Core Low Distortion Pure Rear GaN200 Gallium Nitride Home Power Amplifier
SKU: GaN200
Availability: InStock

BRZHIFI Infineon Core Low Distortion Pure Rear GaN200 Gallium Nitride Home Power Amplifier

Product Model GaN200
Core power device: Infineon CoolGaN™IGB110S10S1 Gallium Nitride Chip
Channel mode: 2.0 stereo/1.0 bridged mono, with flexible switching.
Output Power (4Ω @ 1% THD): Stereo: 200W × 2/Bridged: 500W × 1
Output Power (8Ω@1% THD): Stereo: 150W × 2/Bridged: 400W × 1
Output Power (2Ω@1% THD) Stereo: 270W × 2
Total Harmonic Distortion + Noise 0.009% @ 5 W, 4 Ω, 20–20 kHz
Signal-to-Noise Ratio (SNR) 120dB
Dynamic range: 118dB (A-weighted, 4 Ω)
Frequency response: 20 Hz–50 kHz ±1dB
Overall efficiency >93%
Total gain 24dB
Op-amp configuration: OPA1611 × 2 + OPA1652 × 4
Power solution Built-in 1200W ultra-low noise switching power supply
Input interface RCA unbalanced/XLR balanced/12V trigger interface
Circuit protection over-current/over-voltage/under-voltage/over-temperature/DC five-fold independent protection
Operating voltage 110V/220VAC internal jumper switch
Product size 242 (width) x80 (height) x260 (depth) mm
Product net weight 4kg

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